72Ge in the form of Germanium Tetrafluoride Gas for Semiconductor Manufacture
Enriched Germanium Tetrafluoride gas is used as preamorphic implant to prevent silicon wafer from implant dopant channeling. Furthermore it is used to strain silicon wafer which optimizes the performance and speed of the device.
Specification
Physical Properties:
| Material | 72Ge in form of Germanium Tetrafluoride Electronic Grade |
| Enrichment | 72Ge ≙ 50 – 53 at%
72Ge ≙ 55 – 58 at% |
Chemical Properties:
| Form | GeF4 |
| Purity | > 99,9 wt% |
Impurities in vppm
| Ar | < 25 |
| CO2 | < 25 |
| HF | < 25 |
| N2 | < 25 |
| SiF4 | < 500 |
| SO2 | < 25 |
* Our gas is fully compatible with VLIS-requirements.